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Pressure sensors adopt the independent research anddevelopment technology, use unique processing technology to make an isolatedisland silicon sensitive resistor array on the machinable material layer withthe thickness of 250nm on the SOI wafer, and use electrically isolated technologyof insulating films to substitute traditional electrically isolated technologyof PN junction. Because of avoiding the isolation problem of PN, compared withconventional proliferation silicon pressure sensors, SOI chips have betterstability, and are able to achieve pressure measurement at higher temperature.

This is the core advantage of SOI pressure sensors.

In the aspect of packaging structure, a small-volumeoil-filling high temperature resistant high-pressure resistant structure isused to be filled with special protection liquid, is aged and compensated athigh and wide  temperature range, toobtain high environment applicability, high reliability, and high stability,thereby ensuring high performance of the products.  

The structure is not yet used by other units, thereby havinghigh competitive advantage.

The products are initiated in China, fill the domestic gap, andhave no the competition problem of similar products.  

Basically,  no units researching SOI pressure sensorshave practical and mass-produced products. The national engineering researchcenter of sensors founded in SAIS establishesthe leading position of pressure sensors of SAISin the industry of China.The SOI high-temperature pressure sensors of the same kind at present arewidely applied to the fields of industrial process control  of weapons and special environment. Theproducts fill the domestic gap.

Compared withthe similar products of foreign countries, the product has the advantages ofhigher cost-effectiveness, flexible matching form, and high qualityservice.  

SiliconCapacitance Different Pressure Sensors HB2188 series silicon capacitancedifferent pressure sensors adopt silicon capacitance different pressuresensitive chips as sensing elements, adopt MEMT to independently design andmanufacture stacked symmetrical structures, adopt principle of differentialcapacitance to detect pressure signal, and have the characteristics of fullysolid state, high precision, high reliability, high stability, wide temperaturerange,  small influence of staticpressure, excellent one-way overload characteristic, and easy reardigitalization  processing.

The seriessilicon capacitance different pressure sensor adopts  all stainless steel housing, 316L isolation diaphragm packaging, standarddifferent pressure chamber interface, can be used for measuring the parameterssuch as differential pressure of liquid and gas,  and flow rate, and can be used as a corecomponent for differential pressure transmitter in the process control field,and can be widely applied to the filed of oil, chemical industry, electricity,metallurgy, light industry, food, environmental protection, boiler control, andpressure container measurement.

CompositePressure Sensors

       

HB2166 seriessilicon piezoresistive composite pressure sensors adopt silicon integratedpiezoresistive chips as sensing elements, and adopt MEMT to independentlydesign and manufacture, to measure parameters such as differential pressure,static pressure, temperatures, etc. which occur at site at the same time, andhave the characteristics of high precision, small volume, light weight, highstability. The HB2166 series silicon piezoresistive composite pressure sensoradopts four-diaphragm static pressure and overload protection structure, allstainless steel housing, 316Lisolation diaphragm packaging, and standard different pressure chamberinterface, can be used for measuring the parameters such as differential pressure,static pressure, flow rate, temperatures, and can be widely applied to themeasurement and process control of the industry filed of oil, chemicalindustry, electricity, papermaking, etc.


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